Analysis of the use of transistors based on SiC technology in inverters in the context of electromagnetic compatibility

Wojciech Czuchra,

Wojciech Mysiński,

Bartosz Woszczyna


Currently, manufacturers of power-electronic components are trying to introduce the silicon carbide (SiC) technology in their products and MOSFET transistors made with this technology are available on the market. They are characterised by a significantly higher operating frequency, reaching even 100 kHz and low switching losses. The application of this type of devices causes high voltage gradients at the inverter output, which can lead to increased inverter electromagnetic disturbances. This article presents test results and a high-frequency analysis, allowing for a preliminary evaluation of the use of SiC transistors in inverters in the context of electromagnetic compatibility.

Słowa kluczowe: power electronics, transistors SiC electromagnetic compatibility